mao_2004#

S. S. Mao, F. Quere, S. Guizard, X. Mao, R. E. Russo, G. Petite and P. Martin, “Dynamics of femtosecond laser interactions with dielectrics”, Appl. Phys. A 79, 1695 (2004)

Source record · Catalogue · Review register

DOI: 10.1007/s00339-004-2684-0

Source kind: compilation

Recorded technique: Review of femtosecond laser excitation of wide-gap dielectrics: carrier excitation (Keldysh photoionization, free-carrier absorption, avalanche), nonlinear propagation, self-trapped excitons and defects; the authors’ time-resolved imaging, spectral interferometry and transient-absorption experiments on SiO2, MgO, alkali halides; semiclassical against quantum relaxation of hot electrons in quartz.

Materials in structured entries: LiF, MgO, NaI, SiO2, SiO2_quartz

Dataset quantities: band_gap, electron_trapping_time

Contents: 6 datasets; 4 formulas.

Curation notes#

Journal pages 1695-1709 = PDF pages 1-15 (the PDF’s running heads give the odd page numbers). Identity validated with warnings (the library’s check on the caption layout); title, authors and journal checked against page 1695.

MATERIAL VALUES (datasets): the alkali-halide band gaps ‘ranging from 5.9 eV (NaI) to 13.7 eV (LiF)’ (ref. 32, N. Itoh, Adv. Phys. 31, 491 (1982); p. 1699); ‘E_g(SiO2) ~ 9 eV’ and ‘E_g(MgO) ~ 7.7 eV’, used to count the photons of the I^6 and I^5 laws of Fig. 11 (6 x 1.57 = 9.42 eV, 5 x 1.57 = 7.85 eV, checked; p. 1703; no source cited); the quartz band gap 9.8 eV of the seven-photon relaxation example (p. 1704, an input of the calculation); the SiO2 carrier trapping time 150 fs (spectral interferometry, ref. 49, Martin et al., Phys. Rev. B 55, 5799 (1997); p. 1702).

QUALITATIVE OR NO QUANTITY (not extracted): in diamond, MgO and Al2O3 ‘the negative phase shift was observed to persist for tens of picoseconds’ (no trapping), in NaCl, KBr and SiO2 (amorphous and crystalline) fast STE formation, ‘carrier lifetimes two orders of magnitude smaller’ (p. 1703); the SiO2 STE absorption band at 5.2 eV (Fig. 12), its first excited level ~4.2 eV, the ~2.8 eV luminescence of quartz (ref. 37); the Frohlich coupling constant alpha ‘from 6 x 10^-2 for semiconductors such as GaAs ... to larger than unity for SiO2, and even 5 for NaCl’ (p. 1704); the two LO phonon branches of quartz (150 and 60 meV) and the collision time ‘smaller than 1 fs’ in SiO2 (pp. 1704-1705); the imaged electron densities in silica glass at 1.3 x 10^13 W/cm2, ~2e19 cm^-3 at 333 fs and ~5e19 cm^-3 at 1333 fs (ref. 44, Mao et al. 2003; p. 1701). Fig. 7 (the fused-silica damage threshold at 800 nm against pulse duration, ‘Data from reference [39]’, Tien et al. 1999) and Fig. 11 (with the breakdown threshold of ref. 19, Stuart et al.) are figure-only reproductions.

FORMULAS: the rate equations are printed dN/dt = a I N + sigma N I^m, ‘proposed’ by Stuart et al. (ref. 19 = stuart_1996), whose Eq. (21) has a multiphoton term independent of N: the N in the second term is as printed here (a misprint or a different model; not resolvable).

Recorded bibliographic identity status: VALIDATED_WITH_WARNINGS. This concerns identification of the source; it does not establish the scientific correctness of its contents.