lin_2007#

Q. Lin, O. J. Painter and G. P. Agrawal, “Nonlinear optical phenomena in silicon waveguides: modeling and applications”, Opt. Express 15, 16604 (2007)

Source record · Catalogue · Review register

DOI: 10.1364/oe.15.016604

Source kind: compilation

Recorded technique: A theoretical review of third-order nonlinear propagation in silicon-on-insulator (SOI) waveguides: the tensor chi(3) of crystalline silicon (electronic Kerr and TPA, the one-phonon Raman response), the Drude free-carrier index and absorption, the carrier continuity equation, and the resulting generalized nonlinear Schroedinger and coupled-wave equations. It measures nothing; its material numbers are quoted from the literature or chosen as typical.

Materials in structured entries: Si

Dataset quantities: band_gap, electron_trapping_time, raman_linewidth, raman_response_time, refractive_index, two_photon_absorption_coefficient

Contents: 9 datasets; 2 formulas.

Curation notes#

Journal pages 16604-16644 = PDF pages 1-41 (journal page = PDF page + 16603; the references occupy PDF pages 1-7). Identity checked against the first page. The material is crystalline silicon (Si); the waveguide-specific numbers (modal indices, waveguide GVD, effective areas) are not material properties and are not extracted. There are no tables; every value below is from the text.

EXTRACTED (datasets below): the band gap ‘near 1.12 eV’ (p. 16610; ‘E_g ~ 1.12 eV for silicon corresponds to a wavelength of 1.1 um’, p. 16613); the material index ‘n_0 = 3.48’ at 1.55 um (p. 16618; ‘around 3.48’, p. 16622); the typical TPA coefficient ‘beta_T ~ 0.5 cm/GW’ used in an estimate near 1550 nm (p. 16624); the one-phonon Raman gain FWHM ‘Gamma_R/pi ~ 105 GHz at room temperature’ (p. 16612, ref. 108) and the times of Eq. (41), ‘tau_2 ~ 3 ps’, ‘tau_1 ~ 10 fs’ (p. 16620); the effective carrier lifetimes: typical 1 ns (p. 16632, ‘~1 ns’, p. 16631), 25 ns (ref. 33), 100 ns reduced to 1.9 ns by helium implantation (ref. 140), and the bound < 60 ns for net Raman gain with 0.2 dB/cm loss (p. 16633).

NOT EXTRACTED (no quantity, or not a number for silicon): the Raman shift ‘Omega_R/2pi = 15.6 THz at room temperature’ (p. 16612, refs. 108-110; raman_shift takes cm^-1 only, and the paper prints THz); its temperature dependence (‘Omega_R/2pi decreases by ~40 GHz, while Gamma_R/pi increases by ~10 GHz, if temperature increases by 50 C’, p. 16612); the phonon lifetime ‘about 3 ps’ (p. 16612); the second-order Raman peaks near 29 THz (two TO phonons) and 9 THz (two TA phonons), ‘more than 50 and 200 times smaller’ (p. 16612); Brillouin ‘nearly two orders of magnitude smaller’ than first-order Raman (p. 16612); the Raman gain coefficient ‘in the range of 4.3 to 76 cm/GW’ in the 1.55-um band (p. 16620, refs. 6, 27, 29, 30, 32, 34, 41, 145, 146; no quantity for a Raman gain coefficient, TC-384); the Raman index ‘n_2^R ~ c g_R/(4 omega_s) ~ 1.2 x 10^-4 cm2/GW’ (p. 16641); the nonlinear anisotropy ‘rho is close to 1.27 in the telecom band, with a negligible imaginary part’ (p. 16614, ref. 87; rho = 3 chi_1122/chi_1111, Eq. (7)); the nonlinear figure of merit F_n = n2/(lambda beta_T) ‘only about 0.3’ at 1.55 um (p. 16613); n2 ‘more than 100 times larger in the 1.55-um region than that of fused silica’, peaking near 1.8-1.9 um, always positive below E_g (p. 16613); mobilities ‘100-1000 cm2/(V s) for densities of up to 10^18 cm^-3’ (p. 16614); the SiO2 zero-dispersion wavelength ‘around 1.276 um’ (p. 16622, no quantity). No numerical n2 is given.

DEFINITIONS. Eq. (8), p. 16613: (omega/c) n2 + (i/2) beta_T = 3 omega chi_1111^e/(4 eps0 c^2 n0^2), with P(3) of Eq. (1) in Butcher and Cotter’s convention (3 eps0/(4 (2 pi)^2) ...). Eq. (3): H_R(Omega) = Omega_R^2/(Omega_R^2 - Omega^2 - 2 i Gamma_R Omega). Eq. (41), p. 16620: h_R(t) = Omega_R^2 tau_1 exp(-t/tau_2) sin(t/tau_1), tau_2 = 1/Gamma_R, tau_1 = 1/(Omega_R^2 - Gamma_R^2)^(1/2) ~ 1/Omega_R. The TPA power loss dP/dz = -beta_T |A|^4/a (p. 16624), i.e. dI/dz = -beta_T I^2. Free-carrier index and absorption: Drude, Eqs. (16)-(17); the empirical 1550-nm formulas (18)-(19) and Eq. (20) are recorded as formulas below. Carrier dynamics: dN/dt = G - N/tau_0, Eq. (36), with tau_0 the effective lifetime (recombination, diffusion and drift).

Recorded bibliographic identity status: VALIDATED_WITH_WARNINGS. This concerns identification of the source; it does not establish the scientific correctness of its contents.