aspnes_1983#
D. E. Aspnes and A. A. Studna, “Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV”, Phys. Rev. B 27, 985-1009 (1983)
Source record · Catalogue · Review register
Source kind: measurement
Recorded technique: Spectroscopic ellipsometry, 1.5-6.0 eV, with an automatic rotating-analyzer ellipsometer (RAE): 75 W Xe short-arc lamp, 0.4 m Cary 14 prism-grating monochromator (12 A FWHM at 2537 A to 22 A at 4915 A), quartz Rochon prisms, polarizer at 30 deg, angle of incidence 67.08 +- 0.01 deg, calibration and alignment to +-0.03 deg (pp. 2-3). The pseudodielectric function <epsilon> is calculated from the measured complex reflectance ratio in the two-phase (substrate-ambient) model, Eq. (2), ‘without regard to the possible presence of overlayers’ (p. 4): rather than correct for overlayers, the surfaces were chemically stripped in a windowless cell under dry N2 while their <epsilon_2> at the E2 peak was watched in real time (‘biggest-is-best’), and measured with accretion of order 1 A/h (p. 3). The ac/dc ratios were scaled by a factor rising linearly from about 0.998 at 1.5 eV to 1.000 at 3000 A (the RAE ratio artifact, p. 5). n, k, R and alpha are calculated from <epsilon>.
Materials in structured entries: GaAs, GaSb, Ge, InP, Si
Dataset quantities: extinction_coefficient, permittivity_imaginary, permittivity_real, refractive_index
Contents: 20 datasets; 0 formulas.
Curation notes#
Pdf pages 1-25. Identity: the library’s record is VALIDATED_WITH_WARNINGS (a 2011 date hint in the pdf, the download date); title, authors, journal, volume and pages agree with the first page.
WHAT IS PRINTED. Tables II-IX (one per material) print against the photon energy E (eV), 1.500-6.000 eV in 0.100 eV steps (46 rows): <epsilon_1>, <epsilon_2>, n, k (three decimals), R (three decimals) and 10^3 alpha (cm^-1) (two decimals; the column is alpha in units of 10^3 cm^-1). Table I gives each sample’s orientation, doping, pretreatment and final polish. The temperature is not stated (room temperature: the GaP section quotes ‘the direct gap, which occurs at 2.76 eV at room temperature’, p. 11). The values are pseudodielectric functions ‘reported as observed with no corrections made for possible surface overlayer or substrate damage effects’ (p. 2), except epsilon_2 below the direct thresholds of Si and GaP. Extracted: Si (Table II), Ge (III), GaAs (V), GaSb (VI) and InP (VII), the registered materials, as n and k (primary) and <epsilon_1>, <epsilon_2> (checks). GaP (IV), InAs (VIII) and InSb (IX) are not registered and not extracted.
SILICON (pp. 5-9). <111> surfaces ‘because we could prepare more abrupt interfaces on these surfaces’ (p. 9, of Ge ‘as with Si’). ‘... we have replaced our <epsilon_2> data below 1.93 eV with values calculated from our results for n and from the absorption coefficient data of Dash and Newman (DN). Between 1.93 and 2.84 eV, the data are a linear interpolation between our <epsilon_2> data and those calculated from Ref. 48, with a weighting factor that changes from 0 to 1 over the range’ (p. 6; Ref. 48 = W. C. Dash and R. Newman, Phys. Rev. 99, 1151 (1955), not in the library). So k and epsilon_2 at 1.5-2.8 eV are excluded rows. A point-by-point scaling also brought epsilon_2 to about 0 below the direct onset before the replacement (p. 5). ACCURACY: the third-derivative noise near 5.3 eV is +-0.1 % of the E1 structure (p. 7, Fig. 4); <epsilon_1> and <epsilon_2> are Kramers-Kronig self-consistent ‘to within +-0.5 %’, with structures of 0.2 % near E1 (3.4 eV) and E2 (4.2 eV) (p. 7, Fig. 5); the peak <epsilon_2> is 46.80 at 4.25 eV (p. 7). The conclusion (p. 23): ‘these <epsilon> data are approaching the intrinsic bulk values. Consequently, we do not anticipate significant further changes, certainly no more than 5% and probably no more than 1 or 2%.’ No uncertainty is recorded on the datasets: the paper states a precision and a self-consistency, not an accuracy, and the residual surface layer is a systematic offset (herzinger_1998: the Si table behaves as if it retained 0.18 nm of SiO2, from oxide thicknesses fitted with it; jellison_1992’s k is below this table’s under 3.4 eV, 0.296 against 0.387 at 400 nm). Single-wavelength values quoted in the text: n = 4.097 at 5461 A and n = 3.881 at 6328 A (p. 8), <epsilon> = 35.76 + i34.98 at 3650 A (3.397 eV), 23.40 + i1.78 at 4358 A and 4.51 + i44.16 at 2967 A (p. 9), peak R 0.744 at 4.56 eV (p. 9).
CHECKS (2026-10-14). Table II was compared with its image cell by cell, and every row of the five extracted tables with its redundant columns: epsilon = (n + ik)^2 holds within the printed rounding in every row, R = |(N - 1)/(N + 1)|^2 within its rounding, and alpha = 4 pi k E/(hc) within the rounding of epsilon_2 (alpha is computed from unrounded k), except Si at 3.100 eV: <epsilon_2> is printed 4.321 (image checked), but the row’s n = 5.570, k = 0.387 give 2nk = 4.311 (4.305-4.317 over their rounding), and its alpha = 121.62 x 10^3 cm^-1 requires k = 0.38708, i.e. epsilon_2 = 4.3120 with the printed epsilon_1 (4.321 would give k = 0.3879 and alpha = 121.87): a transposition of 4.312, corrected by an erratum. The remaining discrepancies are ties at the half unit (Ge 5.2 eV n, k; Ge 6.0 eV n; GaAs 4.0 eV k, 4.5 eV n; GaSb 5.4 eV n; InP 2.6 eV k: sqrt(<epsilon>) is x.xxx5). The energy grid is checked by the script.
COMPARISONS (2026-10-14). The refractiveindex.info page Si/Aspnes (46 rows, wavelength in um from 1239.84/E to four figures, n and k as printed here) is this table: its n and k equal Table II’s in every row. Jellison 1992’s Table 2 compares his (100) values with ‘Ref. [4]’ (Edwards in Palik’s Handbook, which takes the Si data in this region from Aspnes and Studna): its 400 nm row, n = 5.570, k = 0.387, is this table’s 3.100 eV row. Both Jellison (Ref. 3) and Herzinger et al. (Ref. 1) cite Aspnes and Studna’s Si as ‘Phys. Rev. B 27, 7466 (1983)’, not this paper’s 985; that paper is not in the library.
Recorded bibliographic identity status: VALIDATED_WITH_WARNINGS. This concerns identification of the source; it does not establish the scientific correctness of its contents.
Datasets#
aspnes_1983/n_Si#
{
"id": "n_Si",
"material": "Si",
"file": "Si/aspnes_1983__n_Si.csv",
"table": "tbl_f343b1b2f612",
"quantity": "refractive_index",
"abscissa_unit": "eV",
"use": "primary",
"parameters": {
"form": "bulk",
"technique": "spectroscopic ellipsometry (rotating analyzer), pseudodielectric function, chemically stripped surface"
}
}
Table II (p. 6 of the pdf, tbl_f343b1b2f612): n of Si, calculated from <epsilon> (two-phase model, no overlayer correction), 1.500-6.000 eV in 0.1 eV steps, 46 rows, three decimals as printed. Sample <111>, n-type 2.3e14 cm^-3 (Table I); Syton pretreatment, final polish BrM pad; BrM, HF5, AmH, HF5 (methanol rinse). Temperature not stated (room temperature).
aspnes_1983/k_Si#
{
"id": "k_Si",
"material": "Si",
"file": "Si/aspnes_1983__k_Si.csv",
"table": "tbl_f343b1b2f612",
"quantity": "extinction_coefficient",
"abscissa_unit": "eV",
"use": "primary",
"excluded_rows": {
"1.500": "Below 1.93 eV epsilon_2 is computed from Dash and Newman's absorption coefficient (p. 6): their values, not this measurement.",
"1.600": "Below 1.93 eV epsilon_2 is computed from Dash and Newman's absorption coefficient (p. 6): their values, not this measurement.",
"1.700": "Below 1.93 eV epsilon_2 is computed from Dash and Newman's absorption coefficient (p. 6): their values, not this measurement.",
"1.800": "Below 1.93 eV epsilon_2 is computed from Dash and Newman's absorption coefficient (p. 6): their values, not this measurement.",
"1.900": "Below 1.93 eV epsilon_2 is computed from Dash and Newman's absorption coefficient (p. 6): their values, not this measurement.",
"2.000": "1.93-2.84 eV: a linear blend of the measured <epsilon_2> and Dash and Newman's values (p. 6), not this measurement alone.",
"2.100": "1.93-2.84 eV: a linear blend of the measured <epsilon_2> and Dash and Newman's values (p. 6), not this measurement alone.",
"2.200": "1.93-2.84 eV: a linear blend of the measured <epsilon_2> and Dash and Newman's values (p. 6), not this measurement alone.",
"2.300": "1.93-2.84 eV: a linear blend of the measured <epsilon_2> and Dash and Newman's values (p. 6), not this measurement alone.",
"2.400": "1.93-2.84 eV: a linear blend of the measured <epsilon_2> and Dash and Newman's values (p. 6), not this measurement alone.",
"2.500": "1.93-2.84 eV: a linear blend of the measured <epsilon_2> and Dash and Newman's values (p. 6), not this measurement alone.",
"2.600": "1.93-2.84 eV: a linear blend of the measured <epsilon_2> and Dash and Newman's values (p. 6), not this measurement alone.",
"2.700": "1.93-2.84 eV: a linear blend of the measured <epsilon_2> and Dash and Newman's values (p. 6), not this measurement alone.",
"2.800": "1.93-2.84 eV: a linear blend of the measured <epsilon_2> and Dash and Newman's values (p. 6), not this measurement alone."
},
"parameters": {
"form": "bulk",
"technique": "spectroscopic ellipsometry (rotating analyzer), pseudodielectric function, chemically stripped surface"
}
}
Table II (p. 6 of the pdf, tbl_f343b1b2f612): k of Si, calculated from <epsilon> (two-phase model, no overlayer correction), 1.500-6.000 eV in 0.1 eV steps, 46 rows, three decimals as printed. Sample <111>, n-type 2.3e14 cm^-3 (Table I); Syton pretreatment, final polish BrM pad; BrM, HF5, AmH, HF5 (methanol rinse). Temperature not stated (room temperature). Below 1.93 eV <epsilon_2> is replaced by values from this paper’s n and Dash and Newman’s absorption coefficient (Phys. Rev. 99, 1151 (1955)), and between 1.93 and 2.84 eV it is a linear blend of the measured and the Dash-Newman values (weight 0 to 1, p. 6): so k and epsilon_2 at 1.5-2.8 eV are Dash and Newman’s, not this paper’s measurement, and those rows are excluded. 3.100 eV k = 0.387 agrees with the corrected epsilon_2.
aspnes_1983/eps1_Si#
{
"id": "eps1_Si",
"material": "Si",
"file": "Si/aspnes_1983__eps1_Si.csv",
"table": "tbl_f343b1b2f612",
"quantity": "permittivity_real",
"abscissa_unit": "eV",
"use": "check",
"parameters": {
"form": "bulk",
"technique": "spectroscopic ellipsometry (rotating analyzer), pseudodielectric function, chemically stripped surface"
}
}
Table II (p. 6 of the pdf, tbl_f343b1b2f612): <epsilon_1> of Si, the measured pseudodielectric function, 1.500-6.000 eV in 0.1 eV steps, 46 rows, three decimals as printed. Sample <111>, n-type 2.3e14 cm^-3 (Table I); Syton pretreatment, final polish BrM pad; BrM, HF5, AmH, HF5 (methanol rinse). Temperature not stated (room temperature). A check: it repeats n and k (epsilon = N^2); the measured quantity, of which n and k are the transform.
aspnes_1983/eps2_Si#
{
"id": "eps2_Si",
"material": "Si",
"file": "Si/aspnes_1983__eps2_Si.csv",
"table": "tbl_f343b1b2f612",
"quantity": "permittivity_imaginary",
"abscissa_unit": "eV",
"use": "check",
"excluded_rows": {
"1.500": "Below 1.93 eV epsilon_2 is computed from Dash and Newman's absorption coefficient (p. 6): their values, not this measurement.",
"1.600": "Below 1.93 eV epsilon_2 is computed from Dash and Newman's absorption coefficient (p. 6): their values, not this measurement.",
"1.700": "Below 1.93 eV epsilon_2 is computed from Dash and Newman's absorption coefficient (p. 6): their values, not this measurement.",
"1.800": "Below 1.93 eV epsilon_2 is computed from Dash and Newman's absorption coefficient (p. 6): their values, not this measurement.",
"1.900": "Below 1.93 eV epsilon_2 is computed from Dash and Newman's absorption coefficient (p. 6): their values, not this measurement.",
"2.000": "1.93-2.84 eV: a linear blend of the measured <epsilon_2> and Dash and Newman's values (p. 6), not this measurement alone.",
"2.100": "1.93-2.84 eV: a linear blend of the measured <epsilon_2> and Dash and Newman's values (p. 6), not this measurement alone.",
"2.200": "1.93-2.84 eV: a linear blend of the measured <epsilon_2> and Dash and Newman's values (p. 6), not this measurement alone.",
"2.300": "1.93-2.84 eV: a linear blend of the measured <epsilon_2> and Dash and Newman's values (p. 6), not this measurement alone.",
"2.400": "1.93-2.84 eV: a linear blend of the measured <epsilon_2> and Dash and Newman's values (p. 6), not this measurement alone.",
"2.500": "1.93-2.84 eV: a linear blend of the measured <epsilon_2> and Dash and Newman's values (p. 6), not this measurement alone.",
"2.600": "1.93-2.84 eV: a linear blend of the measured <epsilon_2> and Dash and Newman's values (p. 6), not this measurement alone.",
"2.700": "1.93-2.84 eV: a linear blend of the measured <epsilon_2> and Dash and Newman's values (p. 6), not this measurement alone.",
"2.800": "1.93-2.84 eV: a linear blend of the measured <epsilon_2> and Dash and Newman's values (p. 6), not this measurement alone."
},
"parameters": {
"form": "bulk",
"technique": "spectroscopic ellipsometry (rotating analyzer), pseudodielectric function, chemically stripped surface"
}
}
Table II (p. 6 of the pdf, tbl_f343b1b2f612): <epsilon_2> of Si, the measured pseudodielectric function, 1.500-6.000 eV in 0.1 eV steps, 46 rows, three decimals as printed. Sample <111>, n-type 2.3e14 cm^-3 (Table I); Syton pretreatment, final polish BrM pad; BrM, HF5, AmH, HF5 (methanol rinse). Temperature not stated (room temperature). A check: it repeats n and k (epsilon = N^2); the measured quantity, of which n and k are the transform. Below 1.93 eV <epsilon_2> is replaced by values from this paper’s n and Dash and Newman’s absorption coefficient (Phys. Rev. 99, 1151 (1955)), and between 1.93 and 2.84 eV it is a linear blend of the measured and the Dash-Newman values (weight 0 to 1, p. 6): so k and epsilon_2 at 1.5-2.8 eV are Dash and Newman’s, not this paper’s measurement, and those rows are excluded. 3.100 eV: printed 4.321, corrected to 4.312 by an erratum.
aspnes_1983/n_Ge#
{
"id": "n_Ge",
"material": "Ge",
"file": "Ge/aspnes_1983__n_Ge.csv",
"table": "tbl_24578d7291a9",
"quantity": "refractive_index",
"abscissa_unit": "eV",
"use": "primary",
"parameters": {
"form": "bulk",
"technique": "spectroscopic ellipsometry (rotating analyzer), pseudodielectric function, chemically stripped surface"
}
}
Table III (p. 10, tbl_24578d7291a9): n of Ge, calculated from <epsilon> (two-phase model, no overlayer correction), 1.500-6.000 eV in 0.1 eV steps, 46 rows, three decimals as printed. Sample <111>, n-type 2.5e14 cm^-3 (Table I); Syton pretreatment, final polish BrM pad; BrM, BHF (H2O rinse). Temperature not stated (room temperature).
aspnes_1983/k_Ge#
{
"id": "k_Ge",
"material": "Ge",
"file": "Ge/aspnes_1983__k_Ge.csv",
"table": "tbl_24578d7291a9",
"quantity": "extinction_coefficient",
"abscissa_unit": "eV",
"use": "primary",
"parameters": {
"form": "bulk",
"technique": "spectroscopic ellipsometry (rotating analyzer), pseudodielectric function, chemically stripped surface"
}
}
Table III (p. 10, tbl_24578d7291a9): k of Ge, calculated from <epsilon> (two-phase model, no overlayer correction), 1.500-6.000 eV in 0.1 eV steps, 46 rows, three decimals as printed. Sample <111>, n-type 2.5e14 cm^-3 (Table I); Syton pretreatment, final polish BrM pad; BrM, BHF (H2O rinse). Temperature not stated (room temperature).
aspnes_1983/eps1_Ge#
{
"id": "eps1_Ge",
"material": "Ge",
"file": "Ge/aspnes_1983__eps1_Ge.csv",
"table": "tbl_24578d7291a9",
"quantity": "permittivity_real",
"abscissa_unit": "eV",
"use": "check",
"parameters": {
"form": "bulk",
"technique": "spectroscopic ellipsometry (rotating analyzer), pseudodielectric function, chemically stripped surface"
}
}
Table III (p. 10, tbl_24578d7291a9): <epsilon_1> of Ge, the measured pseudodielectric function, 1.500-6.000 eV in 0.1 eV steps, 46 rows, three decimals as printed. Sample <111>, n-type 2.5e14 cm^-3 (Table I); Syton pretreatment, final polish BrM pad; BrM, BHF (H2O rinse). Temperature not stated (room temperature). A check: it repeats n and k (epsilon = N^2); the measured quantity, of which n and k are the transform.
aspnes_1983/eps2_Ge#
{
"id": "eps2_Ge",
"material": "Ge",
"file": "Ge/aspnes_1983__eps2_Ge.csv",
"table": "tbl_24578d7291a9",
"quantity": "permittivity_imaginary",
"abscissa_unit": "eV",
"use": "check",
"parameters": {
"form": "bulk",
"technique": "spectroscopic ellipsometry (rotating analyzer), pseudodielectric function, chemically stripped surface"
}
}
Table III (p. 10, tbl_24578d7291a9): <epsilon_2> of Ge, the measured pseudodielectric function, 1.500-6.000 eV in 0.1 eV steps, 46 rows, three decimals as printed. Sample <111>, n-type 2.5e14 cm^-3 (Table I); Syton pretreatment, final polish BrM pad; BrM, BHF (H2O rinse). Temperature not stated (room temperature). A check: it repeats n and k (epsilon = N^2); the measured quantity, of which n and k are the transform.
aspnes_1983/n_GaAs#
{
"id": "n_GaAs",
"material": "GaAs",
"file": "GaAs/aspnes_1983__n_GaAs.csv",
"table": "tbl_fdeda94e867c",
"quantity": "refractive_index",
"abscissa_unit": "eV",
"use": "primary",
"parameters": {
"form": "bulk",
"technique": "spectroscopic ellipsometry (rotating analyzer), pseudodielectric function, chemically stripped surface"
}
}
Table V (p. 14, tbl_fdeda94e867c): n of GaAs, calculated from <epsilon> (two-phase model, no overlayer correction), 1.500-6.000 eV in 0.1 eV steps, 46 rows, three decimals as printed. Sample <100>, n-type 1.7e17 cm^-3 (Table I); bromine-methanol pretreatment, final polish BrM pad; BrM, H2O, AmH (H2O rinse). Temperature not stated (room temperature).
aspnes_1983/k_GaAs#
{
"id": "k_GaAs",
"material": "GaAs",
"file": "GaAs/aspnes_1983__k_GaAs.csv",
"table": "tbl_fdeda94e867c",
"quantity": "extinction_coefficient",
"abscissa_unit": "eV",
"use": "primary",
"parameters": {
"form": "bulk",
"technique": "spectroscopic ellipsometry (rotating analyzer), pseudodielectric function, chemically stripped surface"
}
}
Table V (p. 14, tbl_fdeda94e867c): k of GaAs, calculated from <epsilon> (two-phase model, no overlayer correction), 1.500-6.000 eV in 0.1 eV steps, 46 rows, three decimals as printed. Sample <100>, n-type 1.7e17 cm^-3 (Table I); bromine-methanol pretreatment, final polish BrM pad; BrM, H2O, AmH (H2O rinse). Temperature not stated (room temperature).
aspnes_1983/eps1_GaAs#
{
"id": "eps1_GaAs",
"material": "GaAs",
"file": "GaAs/aspnes_1983__eps1_GaAs.csv",
"table": "tbl_fdeda94e867c",
"quantity": "permittivity_real",
"abscissa_unit": "eV",
"use": "check",
"parameters": {
"form": "bulk",
"technique": "spectroscopic ellipsometry (rotating analyzer), pseudodielectric function, chemically stripped surface"
}
}
Table V (p. 14, tbl_fdeda94e867c): <epsilon_1> of GaAs, the measured pseudodielectric function, 1.500-6.000 eV in 0.1 eV steps, 46 rows, three decimals as printed. Sample <100>, n-type 1.7e17 cm^-3 (Table I); bromine-methanol pretreatment, final polish BrM pad; BrM, H2O, AmH (H2O rinse). Temperature not stated (room temperature). A check: it repeats n and k (epsilon = N^2); the measured quantity, of which n and k are the transform.
aspnes_1983/eps2_GaAs#
{
"id": "eps2_GaAs",
"material": "GaAs",
"file": "GaAs/aspnes_1983__eps2_GaAs.csv",
"table": "tbl_fdeda94e867c",
"quantity": "permittivity_imaginary",
"abscissa_unit": "eV",
"use": "check",
"parameters": {
"form": "bulk",
"technique": "spectroscopic ellipsometry (rotating analyzer), pseudodielectric function, chemically stripped surface"
}
}
Table V (p. 14, tbl_fdeda94e867c): <epsilon_2> of GaAs, the measured pseudodielectric function, 1.500-6.000 eV in 0.1 eV steps, 46 rows, three decimals as printed. Sample <100>, n-type 1.7e17 cm^-3 (Table I); bromine-methanol pretreatment, final polish BrM pad; BrM, H2O, AmH (H2O rinse). Temperature not stated (room temperature). A check: it repeats n and k (epsilon = N^2); the measured quantity, of which n and k are the transform.
aspnes_1983/n_GaSb#
{
"id": "n_GaSb",
"material": "GaSb",
"file": "GaSb/aspnes_1983__n_GaSb.csv",
"table": "tbl_e0d0f2a98631",
"quantity": "refractive_index",
"abscissa_unit": "eV",
"use": "primary",
"parameters": {
"form": "bulk",
"technique": "spectroscopic ellipsometry (rotating analyzer), pseudodielectric function, chemically stripped surface"
}
}
Table VI (p. 17, tbl_e0d0f2a98631): n of GaSb, calculated from <epsilon> (two-phase model, no overlayer correction), 1.500-6.000 eV in 0.1 eV steps, 46 rows, three decimals as printed. Sample <111>, p-type 1.5e17 cm^-3 (Table I); bromine-methanol pretreatment, final polish BrM pad; BrM, H2O, HCl-meth (methanol rinse). Temperature not stated (room temperature).
aspnes_1983/k_GaSb#
{
"id": "k_GaSb",
"material": "GaSb",
"file": "GaSb/aspnes_1983__k_GaSb.csv",
"table": "tbl_e0d0f2a98631",
"quantity": "extinction_coefficient",
"abscissa_unit": "eV",
"use": "primary",
"parameters": {
"form": "bulk",
"technique": "spectroscopic ellipsometry (rotating analyzer), pseudodielectric function, chemically stripped surface"
}
}
Table VI (p. 17, tbl_e0d0f2a98631): k of GaSb, calculated from <epsilon> (two-phase model, no overlayer correction), 1.500-6.000 eV in 0.1 eV steps, 46 rows, three decimals as printed. Sample <111>, p-type 1.5e17 cm^-3 (Table I); bromine-methanol pretreatment, final polish BrM pad; BrM, H2O, HCl-meth (methanol rinse). Temperature not stated (room temperature).
aspnes_1983/eps1_GaSb#
{
"id": "eps1_GaSb",
"material": "GaSb",
"file": "GaSb/aspnes_1983__eps1_GaSb.csv",
"table": "tbl_e0d0f2a98631",
"quantity": "permittivity_real",
"abscissa_unit": "eV",
"use": "check",
"parameters": {
"form": "bulk",
"technique": "spectroscopic ellipsometry (rotating analyzer), pseudodielectric function, chemically stripped surface"
}
}
Table VI (p. 17, tbl_e0d0f2a98631): <epsilon_1> of GaSb, the measured pseudodielectric function, 1.500-6.000 eV in 0.1 eV steps, 46 rows, three decimals as printed. Sample <111>, p-type 1.5e17 cm^-3 (Table I); bromine-methanol pretreatment, final polish BrM pad; BrM, H2O, HCl-meth (methanol rinse). Temperature not stated (room temperature). A check: it repeats n and k (epsilon = N^2); the measured quantity, of which n and k are the transform.
aspnes_1983/eps2_GaSb#
{
"id": "eps2_GaSb",
"material": "GaSb",
"file": "GaSb/aspnes_1983__eps2_GaSb.csv",
"table": "tbl_e0d0f2a98631",
"quantity": "permittivity_imaginary",
"abscissa_unit": "eV",
"use": "check",
"parameters": {
"form": "bulk",
"technique": "spectroscopic ellipsometry (rotating analyzer), pseudodielectric function, chemically stripped surface"
}
}
Table VI (p. 17, tbl_e0d0f2a98631): <epsilon_2> of GaSb, the measured pseudodielectric function, 1.500-6.000 eV in 0.1 eV steps, 46 rows, three decimals as printed. Sample <111>, p-type 1.5e17 cm^-3 (Table I); bromine-methanol pretreatment, final polish BrM pad; BrM, H2O, HCl-meth (methanol rinse). Temperature not stated (room temperature). A check: it repeats n and k (epsilon = N^2); the measured quantity, of which n and k are the transform.
aspnes_1983/n_InP#
{
"id": "n_InP",
"material": "InP",
"file": "InP/aspnes_1983__n_InP.csv",
"table": "tbl_f0b0b06653cf",
"quantity": "refractive_index",
"abscissa_unit": "eV",
"use": "primary",
"parameters": {
"form": "bulk",
"technique": "spectroscopic ellipsometry (rotating analyzer), pseudodielectric function, chemically stripped surface"
}
}
Table VII (p. 18, tbl_f0b0b06653cf): n of InP, calculated from <epsilon> (two-phase model, no overlayer correction), 1.500-6.000 eV in 0.1 eV steps, 46 rows, three decimals as printed. Sample <100>, undoped (Table I); bromine-methanol pretreatment, final polish BrM pad; BrM, AmH (H2O rinse). Temperature not stated (room temperature).
aspnes_1983/k_InP#
{
"id": "k_InP",
"material": "InP",
"file": "InP/aspnes_1983__k_InP.csv",
"table": "tbl_f0b0b06653cf",
"quantity": "extinction_coefficient",
"abscissa_unit": "eV",
"use": "primary",
"parameters": {
"form": "bulk",
"technique": "spectroscopic ellipsometry (rotating analyzer), pseudodielectric function, chemically stripped surface"
}
}
Table VII (p. 18, tbl_f0b0b06653cf): k of InP, calculated from <epsilon> (two-phase model, no overlayer correction), 1.500-6.000 eV in 0.1 eV steps, 46 rows, three decimals as printed. Sample <100>, undoped (Table I); bromine-methanol pretreatment, final polish BrM pad; BrM, AmH (H2O rinse). Temperature not stated (room temperature).
aspnes_1983/eps1_InP#
{
"id": "eps1_InP",
"material": "InP",
"file": "InP/aspnes_1983__eps1_InP.csv",
"table": "tbl_f0b0b06653cf",
"quantity": "permittivity_real",
"abscissa_unit": "eV",
"use": "check",
"parameters": {
"form": "bulk",
"technique": "spectroscopic ellipsometry (rotating analyzer), pseudodielectric function, chemically stripped surface"
}
}
Table VII (p. 18, tbl_f0b0b06653cf): <epsilon_1> of InP, the measured pseudodielectric function, 1.500-6.000 eV in 0.1 eV steps, 46 rows, three decimals as printed. Sample <100>, undoped (Table I); bromine-methanol pretreatment, final polish BrM pad; BrM, AmH (H2O rinse). Temperature not stated (room temperature). A check: it repeats n and k (epsilon = N^2); the measured quantity, of which n and k are the transform.
aspnes_1983/eps2_InP#
{
"id": "eps2_InP",
"material": "InP",
"file": "InP/aspnes_1983__eps2_InP.csv",
"table": "tbl_f0b0b06653cf",
"quantity": "permittivity_imaginary",
"abscissa_unit": "eV",
"use": "check",
"parameters": {
"form": "bulk",
"technique": "spectroscopic ellipsometry (rotating analyzer), pseudodielectric function, chemically stripped surface"
}
}
Table VII (p. 18, tbl_f0b0b06653cf): <epsilon_2> of InP, the measured pseudodielectric function, 1.500-6.000 eV in 0.1 eV steps, 46 rows, three decimals as printed. Sample <100>, undoped (Table I); bromine-methanol pretreatment, final polish BrM pad; BrM, AmH (H2O rinse). Temperature not stated (room temperature). A check: it repeats n and k (epsilon = N^2); the measured quantity, of which n and k are the transform.
Formulas#
No formulas are recorded.
Corrections#
[
{
"dataset": "eps2_Si",
"row": "3.100",
"column": "value",
"printed": "4.321",
"corrected": "4.312",
"reason": "A transposition of 4.312: the row's n = 5.570 and k = 0.387 give epsilon_2 = 2nk = 4.311 (4.305-4.317 over their rounding), and the row's absorption coefficient 121.62 x 10^3 cm^-1 = 4 pi k E/(hc) requires k = 0.38708, i.e. epsilon_2 = 2nk = 4.3120 with the printed epsilon_1 = 30.874; the printed 4.321 would give k = 0.3879 (printed 0.387) and alpha = 121.87. R = 0.486 agrees with either.",
"evidence": "Table II (tbl_f343b1b2f612) and its image, which prints 4.321; every other row of Table II, and of Tables III, V, VI and VII, satisfies epsilon = N^2 and the alpha column within the printed rounding."
}
]
Formula corrections, where recorded, appear with their formulas above. Curation notes may also discuss corrections or unresolved interpretation. Consult the review register for the checks and decisions.